15.1 Vertical Power Semiconductor Devices Based on Bulk GaN Substrates
نویسنده
چکیده
In this extended abstract we discuss vertical power electronic device architectures using low defect density (10 to 10 cm) bulk GaN substrates as the starting material and present recent advances. The avalanche capability and ruggedness of the 0.7mm p-n junction diode are supported by test results demonstrating the diode clamping of a 100たH (8mH) inductive load with an initial current of 10 (1.5)A. Double pulse reverse recovery testing results indicate that the reverse recovery time of the vertical GaN PN diode is not discernible because it is limited by capacitance rather than minority carrier storage, and due to this its switching performance exceeds that of the highest speed silicon diode and SiC diode. GaN p-n junction devices with near ideal turn-on characteristics fabricated on rapid ammonothermal grown substrates are also presented. Finally, substrate reliability and cost issues are addressed and a methodology to identify defective devices is discussed.
منابع مشابه
Vertical Power Semiconductor Devices on Bulk GaN Substrates
Power electronics is the interface between an electrical source and a load that can differ in frequency, amplitude, number of phases, and where voltages and currents are converted from one form to another [1]. A power electronics system comprises power semiconductor devices, gate drivers, controller circuits and the like. The power semiconductor components of this system have been well served b...
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